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| 27.0-36.0 GHz GaAs MMIC Transmitter May 2005 - Rev 20-May-05 Features Sub-harmonic Transmitter Integrated IR Mixer, LO Buffer & Output Amplifier +20.0 dBm Output Third Order Intercept (OIP3) 2.0 dBm LO Drive Level 20.0 dB Image Rejection, 9.0 dB Conversion Gain 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Mimix Broadband's 27.0-36.0 GHz GaAs MMIC transmitter has a +20.0 dBm output third order intercept and 20.0 dB image rejection across the band. This device is an image reject subharmonic anti-parallel diode mixer followed by a three stage output amplifier and includes an integrated LO buffer amplifier. The image reject mixer reduces the need for unwanted sideband filtering before the power amplifier. The use of a subharmonic mixer makes the provision of the LO easier than for fundamental mixers at these frequencies. I and Q mixer inputs are provided and an external 90 degree hybrid is required to select the desired sideband. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. 27TRX0357 Chip Device Layout General Description Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id1,Id2) Gate Bias Voltage (Vg) Input Power (IF Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) uc Min. 27.0 27.0 12.0 DC -1.2 - Electrical Characteristics (Ambient Temperature T = 25o C) Parameter Frequency Range (RF) Upper Side Band Frequency Range (RF) Lower Side Band Frequency Range (LO) Frequency Range (IF) Output Return Loss RF (S22) Small Signal Conversion Gain IF/RF (S21) 2 LO Input Drive (PLO) Image Rejection 2 Isolation LO/RF @ LOx1/LOx2 Output Third Order Intercept (OIP3)1,2 Drain Bias Voltage (Vd1,2) Gate Bias Voltage (Vg1,2,3) Supply Current (Id1) (Vd1=4.0V, Vg=-0.3V Typical) Supply Current (Id2) (Vd2=4.0V, Vg=-0.3V Typical) (1) Measured using constant current. (2) Measured using LO Input drive level of +2.0 dBm. pr od (3) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life. Units GHz GHz GHz GHz dB dB dBm dBc dB dBm VDC VDC mA mA Typ. 15.0 9.0 +2.0 20.0 10.0 +20.0 +4.0 -0.3 230 140 Pr e- Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. (c)2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. tio n +4.5 VDC 320, 190 mA +0.3 VDC 0.0 dBm -65 to +165 OC -55 to MTTF Table3 MTTF Table 3 Max. 36.0 36.0 19.5 3.0 +4.5 +0.1 280 170 Page 1 of 7 27.0-36.0 GHz GaAs MMIC Transmitter May 2005 - Rev 20-May-05 27TRX0357 Transmitter Measurements 0357 (IF = 3GHz, LO = -2, 0, +2dBm): USB Conversion gain and Image Rejection vs. RF freq 0357 (IF = 3GHz, LO = -2, 0, +2dBm): LSB Conversion gain and Image Rejection vs. RF freq 14 12 10 8 6 4 2 0 -2 24 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 -32 -34 -36 -38 -40 Conv Gain , MeasFile=R3C3_0357_+2dBmLO_2302B_USB_9062004_1537.mix , MeasFile=R3C6_0357_+2dBmLO_2302B_USB_9062004_1542.mix , MeasFile=R4C4_0357_+2dBmLO_2302B_USB_9062004_1547.mix LSB Conversion gain (dB)/Image Rejection (dBc) , MeasFile=R5C2_0357_+2dBmLO_2302B_USB_9062004_1552.mix , MeasFile=R6C4_0357_+2dBmLO_2302B_USB_9062004_1557.mix , MeasFile=R3C3_0357_0dBmLO_2302B_USB_9062004_1502.mix , MeasFile=R3C6_0357_0dBmLO_2302B_USB_9062004_1507.mix , MeasFile=R4C4_0357_0dBmLO_2302B_USB_9062004_1511.mix 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 , MeasFile=R5C2_0357_0dBmLO_2302B_USB_9062004_1516.mix , MeasFile=R6C4_0357_0dBmLO_2302B_USB_9062004_1521.mix , MeasFile=R3C3_0357_-2dBmLO_2302B_USB_9062004_1415.mix , MeasFile=R3C6_0357_-2dBmLO_2302B_USB_9062004_1419.mix , MeasFile=R4C4_0357_-2dBmLO_2302B_USB_9062004_1424.mix , MeasFile=R5C2_0357_-2dBmLO_2302B_USB_9062004_1429.mix , MeasFile=R6C4_0357_-2dBmLO_2302B_USB_9062004_1433.mix , MeasFile=R3C3_0357_+2dBmLO_2302B_USB_9062004_1537.mix , MeasFile=R3C6_0357_+2dBmLO_2302B_USB_9062004_1542.mix , MeasFile=R4C4_0357_+2dBmLO_2302B_USB_9062004_1547.mix , MeasFile=R5C2_0357_+2dBmLO_2302B_USB_9062004_1552.mix , MeasFile=R6C4_0357_+2dBmLO_2302B_USB_9062004_1557.mix , MeasFile=R3C3_0357_0dBmLO_2302B_USB_9062004_1502.mix 25 26 27 28 29 30 31 32 33 34 35 36 Image Reject , MeasFile=R3C6_0357_0dBmLO_2302B_USB_9062004_1507.mix , MeasFile=R4C4_0357_0dBmLO_2302B_USB_9062004_1511.mix , MeasFile=R5C2_0357_0dBmLO_2302B_USB_9062004_1516.mix , MeasFile=R6C4_0357_0dBmLO_2302B_USB_9062004_1521.mix , MeasFile=R3C3_0357_-2dBmLO_2302B_USB_9062004_1415.mix , MeasFile=R3C6_0357_-2dBmLO_2302B_USB_9062004_1419.mix , MeasFile=R4C4_0357_-2dBmLO_2302B_USB_9062004_1424.mix , MeasFile=R5C2_0357_-2dBmLO_2302B_USB_9062004_1429.mix , MeasFile=R6C4_0357_-2dBmLO_2302B_USB_9062004_1433.mix Image Reject RF freq (GHz) RF freq (GHz) _0357 (IF=3GHz, LO=-2dBm, Vd1=4V, Id1=230mA, Vd2=4V, Id2=140mA): IP1dB 16 15 14 13 12 11 IP1dB (dBm) _0357 (IF=3GHz, LO=-2dBm, Vd1=4V, Id1=230mA, Vd2=4V, Id2=140mA): OP1dB 16 15 10 9 8 7 6 5 od 13 12 11 10 9 8 7 6 5 4 3 2 1 0 25 26 27 28 29 30 31 RF Freq (GHz) 32 33 34 35 36 37 OP1dB (dBm) 14 uc USB, LO=+2dBm, LSB, LO=+2dBm USB, LO=+0dBm LSB, LO=+0dBm USB, LO=-2dBm LSB, LO=-2dBm 3 2 1 0 25 26 27 28 29 30 31 RF Freq (GHz) 32 33 34 35 36 Pr e- pr 4 37 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. (c)2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. tio n 37 38 39 14 12 10 8 6 4 2 0 -2 24 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 -32 -34 -36 -38 -40 Conv Gain , MeasFile=R3C3_0357_+2dBmLO_2302B_LSB_9062004_1608.mix , MeasFile=R3C6_0357_+2dBmLO_2302B_LSB_9062004_1613.mix , MeasFile=R4C4_0357_+2dBmLO_2302B_LSB_9062004_1618.mix , MeasFile=R5C2_0357_+2dBmLO_2302B_LSB_9062004_1623.mix , MeasFile=R6C4_0357_+2dBmLO_2302B_LSB_9062004_1628.mix , MeasFile=R3C3_0357_0dBmLO_2302B_LSB_9062004_1639.mix , MeasFile=R3C6_0357_0dBmLO_2302B_LSB_9062004_1644.mix , MeasFile=R4C4_0357_0dBmLO_2302B_LSB_9062004_1648.mix , MeasFile=R5C2_0357_0dBmLO_2302B_LSB_9062004_1653.mix , MeasFile=R6C4_0357_0dBmLO_2302B_LSB_9062004_1658.mix , MeasFile=R3C3_0357_-2dBmLO_2302B_LSB_9062004_1708.mix , MeasFile=R3C6_0357_-2dBmLO_2302B_LSB_9062004_1713.mix , MeasFile=R4C4_0357_-2dBmLO_2302B_LSB_9062004_1717.mix , MeasFile=R5C2_0357_-2dBmLO_2302B_LSB_9062004_1722.mix , MeasFile=R6C4_0357_-2dBmLO_2302B_LSB_9062004_1726.mix , MeasFile=R3C3_0357_+2dBmLO_2302B_LSB_9062004_1608.mix , MeasFile=R3C6_0357_+2dBmLO_2302B_LSB_9062004_1613.mix , MeasFile=R4C4_0357_+2dBmLO_2302B_LSB_9062004_1618.mix , MeasFile=R5C2_0357_+2dBmLO_2302B_LSB_9062004_1623.mix , MeasFile=R6C4_0357_+2dBmLO_2302B_LSB_9062004_1628.mix , MeasFile=R3C3_0357_0dBmLO_2302B_LSB_9062004_1639.mix , MeasFile=R3C6_0357_0dBmLO_2302B_LSB_9062004_1644.mix , MeasFile=R4C4_0357_0dBmLO_2302B_LSB_9062004_1648.mix , MeasFile=R5C2_0357_0dBmLO_2302B_LSB_9062004_1653.mix , MeasFile=R6C4_0357_0dBmLO_2302B_LSB_9062004_1658.mix , MeasFile=R3C3_0357_-2dBmLO_2302B_LSB_9062004_1708.mix , MeasFile=R3C6_0357_-2dBmLO_2302B_LSB_9062004_1713.mix , MeasFile=R4C4_0357_-2dBmLO_2302B_LSB_9062004_1717.mix , MeasFile=R5C2_0357_-2dBmLO_2302B_LSB_9062004_1722.mix , MeasFile=R6C4_0357_-2dBmLO_2302B_LSB_9062004_1726.mix USB Conversion gain (dB)/Image Rejection (dBc) USB, LO=+2dBm, LSB, LO=+2dBm USB, LO=+0dBm LSB, LO=+0dBm USB, LO=-2dBm LSB, LO=-2dBm Page 2 of 7 27.0-36.0 GHz GaAs MMIC Transmitter May 2005 - Rev 20-May-05 27TRX0357 1.133 (0.045) 2.533 (0.100) 2.933 (0.116) Mechanical Drawing 1.750 (0.069) 2 3 4 1.231 (0.049) 1 uc 8 7 9 0.0 0.733 (0.029) 0.0 2.533 (0.100) 2.933 3.333 3.500 (0.116) (0.131) (0.138) Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold All Bond Pads are 0.100 x 0.100 (0.004 x 0.004). Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 3.798 mg. Bond Pad #1 (RF Out) Bond Pad #2 (Vg1) Bond Pad #3 (IF1) Bond Pad #4 (Vd2) pr IF1 3 4 7 8 Bond Pad #5 (LO) Bond Pad #6 (Vg3) od 5 (Note: Engineering designator is 27TRX0357) Bond Pad #7 (Vg2) Bond Pad #8 (IF2) Bias Arrangement Bypass Capacitors - See App Note [2] Vd2 2 RF 1 Pr e- Vg1 LO 6 9 Vg2,3 Vd1 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. (c)2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. tio n 5 0.555 (0.022) 6 Bond Pad #9 (Vd1) Page 3 of 7 27.0-36.0 GHz GaAs MMIC Transmitter May 2005 - Rev 20-May-05 27TRX0357 App Note [2] Bias Arrangement - Each DC pad (Vd1,2 and Vg1,2,3) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended. MTTF Tables (TBD) Backplate Temperature 55 deg Celsius 75 deg Celsius 95 deg Celsius Channel Temperature deg Celsius deg Celsius deg Celsius Rth MTTF Hours uc E+ E+ E+ These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry. FITs C/W E+ E+ E+ Bias Conditions: Vd1=Vd2=4.0V, Id1=230 mA, Id2=140 mA Pr e- pr Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 4 of 7 Characteristic Data and Specifications are subject to change without notice. (c)2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. od C/W C/W tio n App Note [1] Biasing - As shown in the bonding diagram, this device is operated by separately biasing Vd1 and Vd2 with Vd(1,2)=4.0V, Id1=230mA and Id2=140mA. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.3V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. 27.0-36.0 GHz GaAs MMIC Transmitter May 2005 - Rev 20-May-05 27TRX0357 App Note [3] USB/LSB Selection - LSB USB IF2 IF1 An alternate method of Selection of USB or LSB: od IF2 USB LSB pr IF1 In Phase Combiner In Phase Combiner e- uc For Lower Side Band operation (LSB): With IF1 and IF2 connected to the direct port (0) and coupled port (90) respectively as shown in the diagram, the LSB signal will reside on the input port. The isolated port must be loaded with 50 ohms. Pr -90 o IF2 IF1 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. (c)2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. tio n -90o For Upper Side Band operation (USB): With IF1 and IF2 connected to the direct port (0) and coupled port (90) respectively as shown in the diagram, the USB signal will reside on the isolated port. The input port must be loaded with 50 ohms. Page 5 of 7 27.0-36.0 GHz GaAs MMIC Transmitter May 2005 - Rev 20-May-05 27TRX0357 Device Schematic Block Diagram Vd1 IF1 Vd2 Output Amp RF Out RF Out RF In IR Mixer RF LO LO Out LO Buffer LO In Vg1 IF2 Pr e- pr Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 6 of 7 Characteristic Data and Specifications are subject to change without notice. (c)2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. od uc Vg2 tio n LO 27.0-36.0 GHz GaAs MMIC Transmitter May 2005 - Rev 20-May-05 27TRX0357 Handling and Assembly Information CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not ingest. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 7 of 7 Characteristic Data and Specifications are subject to change without notice. (c)2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. Pr Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Ablestick 84-1LMI or 84-1LMIT cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.001 2 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold Germanium should be avoided). The work station temperature should be 310 C + 10 C. Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement. e- pr od ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded antistatic workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. uc Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. tio n |
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